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在未来的高频系统芯片,特别是片上网络的设计中,知识产权模块之间的联系至为关键,而单壁纳米碳管则是其中一种很有前景的纳米结构。电路及系统尺寸的不断缩减限制了对1000 GH级别高频信号特征的利用。本文针对不同结构构型的单壁纳米碳管,对高质量互联中四项重要的四项电参数——阻抗,传播常量,电流密度以及信号延时进行了推导。每个参数均表现出了对其设计互联频率范围和构型的强相关性。与现有理论和实验结果相比,本文所提出的模型在解决下一代高速集成电路互联问题上有其新颖性。
In the future design of high frequency system chips, especially on-chip networks, the connection between intellectual property modules is crucial, and single-walled carbon nanotubes are one of the promising nanostructures. The shrinking size of circuits and systems has limited the use of high-frequency signal characteristics of 1000 GH. In this paper, four kinds of important four electrical parameters in high quality interconnection, such as impedance, propagation constant, current density and signal delay, are deduced for single-walled carbon nanotubes with different structural configurations. Each parameter shows a strong correlation to the range and configuration of its design interconnect frequency. Compared with the existing theoretical and experimental results, the proposed model has its novelty in solving the interconnection problem of next-generation high-speed integrated circuits.