用电化学沉积方法,在锌片上成功制备出了Co掺杂ZnO稀磁半导体薄膜。XRD研究表明,Co-ZnO薄膜均为六方纤锌矿结构,没有出现与Co相关的杂质相。由XPS测量结果可知,钴离子在ZnO薄膜中以+2价的形式存在,替换了ZnO晶格中部分Zn2+。通过样品室温铁磁性测量结果进一步验证了Co2+取代了ZnO晶格中Zn2+的格位。 Electrochemical deposition method was used to prepare Co-doped ZnO diluted magnetic semiconductor thin films successfully on zinc flake. XRD studies show that Co-ZnO thin films are hexagonal wurtzite structure, no Co-related impurity phase. The XPS measurement results show that the cobalt ions exist in the form of +2 valences in the ZnO thin film, replacing part of Zn2 + in the ZnO lattice. The results of ferromagnetism measurements at room temperature further verify the substitution of Co2 + for the Zn2 + lattice in ZnO lattice.