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依据缺陷势垒模型选取Ｚｎ２＋和Ｎｂ５＋复合掺杂的ＳｎＯ２陶瓷进行研究，测量了材料的密度、失重率等物理性质和非线性系数、电流－电压（Ｉ－Ｖ）关系曲线等电子性质。利用低电流区电流密度与电场（ｌｏｇＪ－Ｅ）的线性关系定性地讨论了势垒高度与非线性之间的关系。
Based on the defect barrier model, the SnO2 ceramics doped with Zn2 + and Nb5 + were selected to study the electronic properties such as the density and weightlessness ratio of the material, the nonlinearity coefficient and the current-voltage (I-V) curve. The relationship between barrier height and nonlinearity was qualitatively discussed by using the linear relationship between the current density in the low current region and the electric field (logJ-E).