论文部分内容阅读
本文提出了一种新的多能量离子注入的计算方法——“等效面积法”。应用这一方法可按器件的特殊要求,任意设计各种浓度分布。 本文应用这一方法,设计和计算了具有矩形杂质分布的Si-RAPD器件,具有低一高一低特殊分布的Si-RAPD和具有“马头”型结构的 GaAs M-ESPET器件,IMPATT器件,均得到了较为满意的结果。还对用这一方法设计新型器件的前景作了预测,最后把本文的计算结果与本纳德(R·H·Benhard)(1977)的实测值作了比较,结果是令人满意的。
This paper presents a new method of calculating multi-energy ion implantation - the “equivalent area method.” Application of this method according to the special requirements of the device, any design of a variety of concentration distribution. In this paper, Si-RAPD devices with rectangular impurity distribution, Si-RAPD with low one high and one low and GaAs M-ESPET with a “horse head” structure are designed and calculated. IMPATT devices, Have been more satisfied with the results. The prospect of designing new devices using this method was also predicted. Finally, the results of this paper were compared with those of R. Benhard (1977) and the results were satisfactory.