论文部分内容阅读
系统地研究了新的GaAs腐蚀液HCl-H_2O_2-H_2O.用它腐蚀的GaAs表面具有的残留氧化物膜较薄,且不易引起杂质沾污.给出了等腐蚀速率的三元图和各区中的激活能.研究了对于GaAs及常用于GaAs器件工艺中之金属的各种腐蚀特性以及对于器件工艺中常用的各种光刻胶的溶解性,并与其他腐蚀液系统作了对比.实验表明,腐蚀是依照氧化随后溶解氧化物的过程进行的.考虑到溶液中组分间的化学反应 pA+qB→产物,提出了一般的腐蚀速率方程.用于HCl-H_2O_2-H_2O系统的计算结果与实验数据一致.
The new GaAs etching solution HCl-H 2 O 2 -H 2 O has been systematically studied, and the residual oxide film on the surface of GaAs etched by it is thin and it is not easy to cause impurity contamination. Of the activation energy of GaAs and GaAs devices used in the process of a variety of metal etching properties and for the device used in a variety of commonly used photoresist solubility and compared with other corrosive liquid system experiments show , The corrosion is carried out according to the process of oxidation followed by the dissolution of the oxide.A general equation of corrosion rate is proposed considering the chemical reaction of pA + qB → products among the components in the solution. The calculation results for the system HCl-H 2 O 2 -H 2 O The experimental data are consistent.