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描述并论证了一种具有“浮置光电二极管”的行间转移CCD摄象器。这种新颖的单元结构将转移栅和垂直移位寄存器的一个栅电极合并成为一个单一的栅,从而省去了第一层多晶硅。它只需要两层多晶硅而不是三层,并且得到了一个简单的结构。这种由离子注入形成的浮置光电二极管甚至在短波长范围提供了高的灵敏度。用两层多晶硅栅工艺制成的488×385单元的摄象器在400nm波长光照时得到了20％的量子效率。这种单元结构对提高器件性能呈现出明显的优点,并有可能获得高的成品率。
An interline transfer CCD camera with “floating photodiode” is described and demonstrated. This novel cell structure combines a gate electrode of a transfer gate and a vertical shift register into a single gate, eliminating the need for a first layer of polysilicon. It only requires two layers of polysilicon instead of three and has a simple structure. This floating photodiode formed by ion implantation provides high sensitivity even in the short wavelength range. A 488 x 385-unit camera made with a two-layer polysilicon gate process achieves 20% quantum efficiency at 400 nm wavelength illumination. This cell structure presents significant advantages in improving device performance and makes it possible to achieve high yield.