磁控溅射制备铜钨薄膜 ,用原子力显微镜和功率谱密度法分析薄膜生长表面形貌的分形维数 ,发现频段的选择基本不影响分形维数与溅射时间的关系 .随溅射时间延长 ,薄膜厚度增加 ,分形维数增大 ,电阻率随分形维数的增大而升高 .分析分形维数与电阻率的关系 ,认为对同一物质的导电薄膜 ,其表面形貌与电阻率存在对应关系 The Cu-W films were prepared by magnetron sputtering. The fractal dimension of the film growth surface morphology was analyzed by atomic force microscopy and power spectral density method. It was found that the choice of frequency band did not affect the relationship between the fractal dimension and the sputtering time. , The film thickness increases, the fractal dimension increases, and the resistivity increases with the increase of fractal dimension.Analysis of the relationship between the fractal dimension and the resistivity shows that the surface morphology and resistivity of the conductive film with the same material exist Corresponding relationship