论文部分内容阅读
本文介绍了用于常γ电调管的具有特宽过渡区的多层GaAs外延材料的研究。文中分析了不同衬底对常γ电调管特性的影响,用掺Si的GaAs作为衬底,并掌握生长条件可得到较好的多层外延的纵向浓度分布,即尖峰半高宽度凸δ=0.03～0.04μm,高、低浓度之间过渡区为0.5～1.0μm。文中还讨论了外延层纵向浓度分布对器件特性的影响。使用结果表明,器件具有常γ的特性,γ值大于1,且击穿电压大于22伏。
This article describes the study of multilayer GaAs epitaxial materials with extra wide transitions for a constant gamma tube. In this paper, the influence of different substrates on the characteristics of the conventional γ-tube is analyzed. The GaAs-doped GaAs substrate is used as the substrate, and the vertical distribution of multi-layer epitaxial growth is obtained under the growth conditions. That is, 0.03 ~ 0.04μm, high and low concentration of transition between 0.5 ~ 1.0μm. The paper also discusses the influence of the vertical distribution of epitaxial layer on the device characteristics. The results show that the device has a constant γ characteristics, γ value greater than 1, and breakdown voltage greater than 22 volts.