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铒离子在硅中呈现弱施主特性 ,O、Er双掺杂可提高施主浓度两个数量级 .氧杂质与铒离子形成复合体 ,其施主能级可能是铒离子发光能量转换的重要通道 .提出了掺铒硅光致发光激子传递能量模型 ,建立了发光动力学速率方程 ,并进行了详细推导 .发光效率与光激活铒离子浓度、激发态寿命及自发辐射寿命等因素有关 .指出铒离子 -束缚激子复合体的热离化和激发态铒离子能量反向传递是引起铒离子发光温度猝灭的主要原因 .拟合 PL测量实验结果表明 :它们对应的激活能分别为 6.6me V和 47.4me V.
The erbium ion presents a weak donor characteristic in silicon, and double doping with O and Er can increase the donor concentration by two orders of magnitude. The oxygen impurity forms a complex with erbium ions, and its donor level may be an important channel for erbium ion energy conversion. Erbium-doped silicon photoluminescence exciton transfer energy model was established, and the luminescence kinetic rate equation was established and deduced in detail.The luminescent efficiency was related to the concentration of activated erbium ion, the lifetime of excited state and the spontaneous emission lifetime, The main reason for the quenching of erbium ion luminescence temperature is the thermal ionization of the bound exciton complex and the reverse transfer of excited-state erbium ion energy.The results of fitting PL measurements show that their corresponding activation energies are 6.6 meV and 47.4 me V.