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本文报导了一种新颖的异质结光电晶体管(HPT),它采用的是双基区结构,以便使发射极-基极耗尽区置于宽禁带材料中。在半绝缘衬底上制造出了小型的HPT,其最大电流增益β=300。用微微秒脉冲染色激光器已获得响应时间,其上升时间缩短到250ps。FWHM=320ps。
This paper reports a novel Heterojunction Phototransistor (HPT) that uses a dual-base structure to place the emitter-base depletion region in a wide band gap material. A small HPT is fabricated on a semi-insulating substrate with a maximum current gain of β = 300. Polarization lasers with pico-second pulses have achieved response times that have been reduced to as fast as 250 ps. FWHM = 320ps.