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The effects of Ge in CZSi on the density and the rate of nucleation of supersaturated oxygen precipitation at lower annealing temperatures were examined.It is discovered that rod like precipitation was suppressed when annealing at 700℃,but Ge has no effect on the morphology and the growth of oxygen precipitation at annealing temperatures more than 900℃.The results indicated that Ge neither acted as center of nucleation nor was involved in oxygen precipitation and its defect.
The effects of Ge in CZSi on the density and the rate of nucleation of supersaturated oxygen precipitation at lower annealing temperatures were monitored. It is found that rod like precipitation was suppressed when annealing at 700 ° C., but Ge has no effect on the morphology and the growth of oxygen precipitation at annealing temperatures more than 900 ° C. The results indicated that Ge neither acted as center of nucleation nor was involved in oxygen precipitation and its defect.