Mg-doped AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD)using an indium-assisted growth method.At room temperature,the resistivity of Mg-doped Al0.43Ga0.57N epilayer grown under indium(In)ambient is of the order of 104 Ω·cm,while the resistivity of Mg-doped Al0.43Ga0.57N grown without In assistance is of the order of 106 Ω·cm.The ultraviolet light-emitting diodes(UV-LEDs)using the In-assisted Mg-doped Al0.43Ga0.57 N as the p-type layers were fabricated to verify the function of indium ambient.It is found that there are a lower tu-on voltage and a lower diode series resistance in the UV-LEDs fabricated with p-type A10.43Ga0.57N layers grown under In-ambient.