引言本文报导一种适用于研究和制作电流增益带宽乘积f_r达5千兆赫的平面微波晶体管的硼扩散技术。通过淀积最小厚度的硼玻璃来实现硼扩散。硼玻璃厚度最小可使杂质分布均匀,从而使杂质中心限定为一定量。为达到这种目的,选择了最佳扩散参数——气体掺杂 Introduction This paper reports a boron diffusion technique suitable for the study and fabrication of planar microwave transistors with current gain bandwidth product f_r up to 5 GHz. Boron diffusion is achieved by depositing a minimum thickness of borosilicate glass. The minimum thickness of boron glass allows uniform distribution of impurities, so that the impurity center is limited to a certain amount. For this purpose, the best diffusion parameter was chosen - gas doping