采用金属有机物气相外延方法 ,研制了 In Ga N/Ga N单量子阱结构的绿光发光二极管 .测量了其电致发光光谱 ,及发光强度与注入电流的关系 .室温 2 0 m A的注入电流时 ,发光波长峰值为 530 nm,半高宽为 30 nm.注入电流小于 40 m A时 ,发光强度随注入电流单调递增 The green light-emitting diodes of In Ga N / GaN single quantum well structure were fabricated by metal organic vapor phase epitaxy method.The relationship between the electroluminescence spectra and the luminescence intensity and the injection current was measured.The injection current , The emission peak wavelength is 530 nm and the FWHM is 30 nm. When the injection current is less than 40 m A, the emission intensity increases monotonously with the injection current