论文部分内容阅读
用同步辐射透射白光形貌相和应力双折射法研究了沿 111 方向生长的Yb∶YAG晶体的生长缺陷、晶体中的位错起源和走向。Yb∶YAG晶体中的生长缺陷主要有 :生长条纹、核心和位错等。晶体中的位错主要起源于籽晶、杂质粒子以及生长初期的晶种和固液界面处位错成核。位错的走向垂直于生长界面 ,符合能量最低原理。采用凸界面生长工艺可以有效的消除晶体中的位错。
The growth defects of Yb: YAG crystals grown along the 111 direction and the origin and orientation of dislocations in the crystal were investigated by synchrotron radiation transmission white light topography and stress birefringence method. Yb: YAG crystal growth defects are: growth stripes, core and dislocation and so on. The dislocations in the crystal mainly originate from the seeds, impurity particles and dislocation nucleation at the seed and solid-liquid interface at the initial stage of growth. Dislocation perpendicular to the growth of the interface, in line with the principle of the lowest energy. The use of convex interface growth process can effectively eliminate the dislocations in the crystal.