一、引言功率放大器最好采用宽栅 FET。然而,栅宽方向上电场的非均匀性限制了栅的宽度。在这个条件下,MESFET 可视为一个分布器件,即为一个有源传输线,其中源-栅-漏线路联接如图1所示。比较 MESFET(栅宽度窄)的分立和集总模型看出,由于射频电阻引起的损耗以及驻波引起的失配损耗,宽栅分布模型将引入额外的传导损耗,这两者是传输线的特性。FuKuta 等采用粗糙模型曾研究过这个问题,其中仅考虑无源元件而忽略了器件的跨导。Kohn 和 Landauer 在考虑分布器件效应时研究过这个问题,但忽略了耦合线电,这些 First, the introduction of the best power amplifier wide gate FET. However, the non-uniformity of the electric field in the gate width direction limits the width of the gate. Under this condition, MESFET can be regarded as a distributed device, namely is an active transmission line, among them the source - gate - drain connection of the circuit is shown as in Fig. The discrete and lumped model comparing MESFETs (narrow gate width) shows that the wide-gate distribution model introduces additional conduction losses due to the losses due to RF resistance and the mismatch losses caused by standing waves, both of which are transmission line characteristics. FuKuta et al. Studied this problem using a rough model where only the passive components are considered while the transconductance of the device is ignored. Kohn and Landauer studied this issue while considering the effects of distributed devices, but neglected the coupling of these lines