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A brand new and feasible method for measuring the carrier lifetime and capture cross-section of a barrier by using the negative resistance segment of the I-V characteristics of a barrier-type thyristor(BTH) is put forward.The measuring principle and calculation method are given.The BTH samples are experimentally measured and the results are analyzed in detail.
A brand new and feasible method for measuring the carrier lifetime and capture cross-section of a barrier by using the negative resistance segment of the IV characteristics of a barrier-type thyristor (BTH) is put forward. The measuring principle and calculation method are given The BTH samples are experimentally measured and the results are analyzed in detail.