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用射频等离子体辅助分子束外延技术 ( RF- MBE)在 c面蓝宝石衬底上外延了高质量的 Ga N膜以及 Al N/Ga N超晶格结构极化感应二维电子气材料 .所获得的掺 Si的 Ga N膜室温电子浓度为 2 .2× 10 1 8cm- 3,相应的电子迁移率为 2 2 1cm2 /( V· s) ;1μm厚的 Ga N外延膜的 ( 0 0 0 2 ) X射线衍射摇摆曲线半高宽 ( FWHM)为 7′;极化感应产生的二维电子气室温电子迁移率达到 10 86cm2 /( V· s) ,相应的二维电子气面密度为 7.5× 10 1 2 cm- 2 .
A high-quality Ga N film and a polarization induced two-dimensional electron gas of Al N / Ga N superlattice structure were epitaxially grown on a c-plane sapphire substrate by radio frequency plasma-assisted molecular beam epitaxy (RF-MBE) , The corresponding electron mobility is 2 2 1cm2 / (V · s); the thickness of 1 μm thick Ga N epitaxial film is (1002) ) FWHM of the X-ray diffraction rocking curve is 7 ’; the temperature-induced electron mobility in the two-dimensional electron gas chamber generated by polarization induction reaches 10 86 cm 2 / (V · s) and the corresponding two-dimensional electron gas surface density is 7.5 × 10 1 2 cm-2.