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在可靠性筛选中检测具有潜在损伤的器件一直是个难题.对GaA lAs红外发光二极管(IRLED)功率老化前后低频噪声的测量发现,1/f噪声幅值与偏置电流的γ次方成正比(小电流区γ=1,在大电流区γ≈2),且老化后1/f噪声幅值比老化前增大2个数量级.基于载流子数涨落和迁移率涨落机制建立了一个GaA lAs IR LED的1/f噪声模型,分析结果表明GaA lAs IR LED的1/f噪声在小电流时反映体陷阱特征,大电流时反映激活区陷阱特征,1/f噪声的增加归因于功率老化诱生的界面陷阱和表面陷阱,1/f噪声可以用来检测GaA lAs IR LED s的潜在缺陷.
The detection of potentially damaging devices in reliability screening has always been a challenge. The measurement of the low frequency noise before and after power aging of the GaAlAs IR LED reveals that the 1 / f noise amplitude is proportional to the gamma power of the bias current Small current region γ = 1, and γ ≈ 2 in high current region), and the 1 / f noise amplitude after aging is two orders of magnitude larger than that before aging. Based on the mechanism of carrier number fluctuation and mobility fluctuation, a The 1 / f noise model of the GaAlAs IR LED shows that the 1 / f noise of the GaAlAs IR LED reflects the body trap characteristics at low currents and the trap characteristics of the active region at high currents, with the 1 / f noise being attributed to 1 / f noise can be used to detect potential defects in GaAlAsR LED’s due to power-induced interface and surface traps.