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CMOS IC已有十多年的丰富的工业实践,而这十年可以说几乎都着眼于CMOS的低功耗特性这一点。由于PMOS、NMOS的共存使得集成度较低, 工艺复杂和制造成本较高,这些与NMOSLSI相比较,认为是实现VLSI化的关键性不利因素。可是,尽管NMOS LSI采用各种各样的电路设计,例如用动态型电路或内部脉冲同步型电路等,但在功耗或工作容限等方面仍然逐渐趋于极限。随着电路不断改进,工艺也越来越复杂。另一方面,就本质上来说,CMOS有功耗低,对噪声抗扰度高的特点,它即保持着工作电压以及温度范围宽广的特性,又可迅速达到高密度化。
CMOS IC has been more than 10 years of rich industrial practice, and this decade can be said that almost all focus on CMOS low-power characteristics of this point. Due to the co-existence of PMOS and NMOS, the low integration, complicated process and high manufacturing cost are considered, which are considered as the key negative factors for implementing VLSI compared with NMOSSI. However, although the NMOS LSI uses a variety of circuit designs, for example, dynamic circuits or internal pulse synchronous circuits, it is still becoming more and more limited in terms of power consumption or work tolerance. As the circuit continues to improve, the process becomes more and more complex. On the other hand, CMOS is inherently characterized by low power consumption and high noise immunity, keeping the operating voltage and temperature characteristics of a wide range, and can quickly achieve high density.