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本文对空心阴极放电离子渗硼的机理以及渗入速度快的原因作了分析,并结合试验结果提出了强化渗速的机理。
In this paper, the mechanism of hollow boron ion implantation boron ionization and the reasons of infiltration speed are analyzed. The mechanism of enhanced infiltration rate is put forward based on the experimental results.