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研究了利用减压外延的方法制备Si1-x-yGexCy薄膜的特性及与工艺参数之间的关系,给出了改善表面粗糙度、减少有源区关键尺寸(CD)减少量的方法。在单晶硅、图形硅片α-Si和光片α-Si表面Si1-x-yGexCy上淀积的Si1-x-yGexCy薄膜的表面形貌不同,在单晶硅上成长的是单晶态的Si1-x-yGexCy,在除单晶硅之外的材料上成长的都是多晶态的Si1-x-yGexCy,多晶态Si1-x-yGexCy的淀积速率高于单晶态Si1-x-yGexCy的淀积速率。多晶态Si1-x-yGexCy的淀积速率高于单晶态Si1-x-yGexCy的淀积速率,造成了淀积工艺完成后有源区CD的减少。利用低温淀积工艺和控制浅沟槽隔离(STI)凹陷的深度,可以有效减少由于淀积Si1-x-yGexCy薄膜造成的有源区CD减少量。同时,研究了碳组分对硼扩散的抑制作用,碳组分越高,对硼扩散的抑制作用越大。
The properties of Si1-x-yGexCy thin films prepared by vacuum epitaxy and their relationship with the process parameters were studied. The methods to improve the surface roughness and reduce the reduction of the critical dimension (CD) in the active region were given. The surface morphology of Si1-x-yGexCy films deposited on Si, x-yGexCy and Si-x-yGexCy films are different from that of monocrystalline silicon, Si1-x-yGexCy, polycrystalline Si1-x-yGexCy is grown on materials other than single-crystal silicon, the deposition rate of polycrystalline Si1-x-yGexCy is higher than that of single-crystal Si1-x The deposition rate of -yGexCy. The deposition rate of the polycrystalline Si1-x-yGexCy is higher than the deposition rate of the monocrystalline Si1-x-yGexCy, resulting in a decrease in the active region CD after the deposition process is completed. Using the low-temperature deposition process and controlling the depth of shallow trench isolation (STI) recess, the decrease in active region CD due to the deposition of Si1-x-yGexCy thin film can be effectively reduced. At the same time, the inhibitory effect of carbon component on boron diffusion was studied. The higher the carbon component, the greater the inhibitory effect on boron diffusion.