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In the environment of space radiation, the high-energy charged particles or high-energy photons acting on a spacecraft can cause either temporary device degradation or permanent failure. The traditional probability model is difficult to obtain reliable estimation of unit radiation resistance performance with small samples. Considering that different products will change differently after high-energy particle radiation, we construct a model based on the gamma degradation process. This model can efficiently describe the law of unit radiation resistance variation with the total radiation dose levels under the effect of the total dose and displacement damage. Finally, the proposed model is used to assess the anti-radiation performance of the N-channel power MOSFET device STRH60N20FSY3 produced by STM to obtain average unit radiation resistance, survival probability, survival function, etc.
In the environment of space radiation, the high-energy charged particles or high-energy photons acting on a spacecraft can cause either temporary device degradation or permanent failure. The traditional probability model is difficult to obtain reliable estimation of unit radiation resistance performance with small samples Considering that different products will change differently after high-energy particle radiation, we construct a model based on the gamma degradation process. This model can be described in the law of unit radiation resistance variation with the total radiation dose levels under the effect of the total dose and displacement damage. Finally, the proposed model is used to assess the anti-radiation performance of the N-channel power MOSFET device STRH60N20FSY3 produced by STM to obtain the average unit radiation resistance, survival probability, survival function, etc.