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Taking 0.1 mol/L Zn(Ac)_2 as precursor and PEO as assistance,ZnO films were made by sol-gel method,and then irradiated at RT by 400 keV Xe~(20+)to 10~(13)ion/cm~2.These samples were investigated by using a fluorescent spectroscopy and a scanning electron microscopy(SEM).
Taking 0.1 mol / L Zn (Ac) _2 as precursor and PEO as assistance, ZnO films were made by sol-gel method and then irradiated at RT by 400 keV Xe ~ (20+) to 10 ~ (13) ion / cm ~ 2. These samples were investigated by using a fluorescent spectroscopy and a scanning electron microscopy (SEM).