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ZnMn_2O_4 films for resistance random access memory(RRAM) were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn_2O_4 films were investigated. The ZnMn_2O_4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching(BRS) behavior dominated by the space-charge-limited conduction(SCLC) mechanism in the high resistance state(HRS) and the filament conduction mechanism in the low resistance state(LRS), but the ZnMn_2O_4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel(P-F) conduction mechanism in both HRS and LRS. Ag/ZnMn_2O_4/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest RHRS/R_(LRS) ratio of 104 and the lowest V_(ON) and V_(OFF) of 3.0 V have been observed in Ag/ZnMn_2O_4/Pt device. Though the Ag/ZnMn_2O_4/n-Si device also possesses the highest RHRS/R_(LRS) ratio of 104, but the highest values of V_(ON),V_(OFF), RHRS and R_(LRS), as well as the poor endurance and retention characteristics.
The effects of electrode on IV characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn 2 O 4 films were investigated. The ZnMn 2 O 4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching (BRS) behavior dominated by space-charge-limited conduction (SCLC) mechanism in the high resistance state (LRS), but the ZnMn 2 O 4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel (PF) conduction mechanism in both HRS and LRS. Ag / ZnMn 2 O 4 / p-Si device possesses the best endurance and retention characteristics , in which the number of stable repetition switching cycles is over 1000 and the retention time is longer than 106 seconds. However, the highest RHR The LRS ratio of 104 and the lowest V ON and V OFF of 3.0 V have been observed in Ag / ZnMn 2 O 4 / Pt device. Although the Ag / ZnMn 2 O 4 / n-Si device also possesses the highest RHRS / R_ (LRS) ratio of 104, but the highest values of V_ (ON), V_ (OFF), RHRS and R_ (LRS), as well as the poor endurance and retention characteristics.