论文部分内容阅读
采用感应耦合等离子体刻蚀技术对InAsP/InP应变多量子阱和InAsP/InGaAsP应变单量子阱材料的覆盖层进行了不同厚度的干法刻蚀.实验结果表明,干法刻蚀后量子阱光致荧光强度得到了不同程度的增强.干法刻蚀过程不仅增加了材料表面粗糙度,同时使其内部微结构发生变化.采用湿法腐蚀方法去除表面变粗糙对量子阱发光特性的影响,得到干法刻蚀覆盖层20nm后应变单量子阱微结构变化和其表面粗糙度变化两个因素分别使荧光强度提高1.8倍和1.2倍的结果.
The dry etching of different thickness of InAsP / InP strain quantum well and InAsP / InGaAsP strained single quantum well material was carried out by inductively coupled plasma etching.The experimental results show that the quantum well light The fluorescence intensity was enhanced to some extent.The dry etching process not only increased the surface roughness of the material but also changed the internal microstructure.The wet etching method was used to remove the effect of surface roughening on the luminescence properties of the quantum well, After the dry etching of 20nm, the single-quantum well structure and the variation of the surface roughness of the single-quantum well were increased 1.8 times and 1.2 times respectively.