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本文报导用脉冲CO_2激光辐照磷扩散多晶硅,获得多晶硅薄层电阻从17Ω/□降低到7.4Ω/□的结果。并用扫描电子显微镜观察了激光辐照后的表面结构形貌。对激光辐照多硅的热稳定性也进行了初步研究。
This paper reports the results of pulsed CO2 laser irradiation of phosphorus-diffused polycrystalline silicon to reduce the sheet resistance of polycrystalline silicon from 17Ω / □ to 7.4Ω / □. The morphology of the surface after laser irradiation was observed by scanning electron microscopy. The thermal stability of polysilicon irradiated by laser was also studied.