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本文研究了高能质子对InSb轰击所引起的损伤的绝缘隔离效应,并将这一效应用于解决InSb红外探测器的光敏面扩大及多元列阵的串音问题.试验是在能量为40keV—2MeV,剂量为10~(13)-10~(16)/厘米~2范围内分别在离子注入机或静电加速器中对 InSb 进行室温下的质子注入.用双晶衍射仪、直径为100微米的小光点设备、串音的电学法测试及高帧速成象仪上检测了损伤隔离效应.实验结果证明了质子轰击损伤隔离是一种优良的电隔离技术,不仅可用于解决InSb红外探测器光敏面扩大及多元列阵探测器的电学串音问题,也是制备平面型器件的优良方法.
In this paper, we study the effect of high-energy protons on the isolation of the damage caused by InSb bombardment and use this effect to solve the photosensitive surface expansion and the crosstalk problem of InSb infrared detectors. The experiment is carried out at an energy of 40keV-2MeV At a dose of 10 ~ (13) -10 ~ (16) / cm ~ 2 at room temperature in an ion implanter or an electrostatic accelerator, respectively, using a twin crystal diffractometer with a diameter of 100 microns Light spot device, crosstalk test and high frame rate imager.The experimental results show that the proton bombardment damage isolation is an excellent electrical isolation technology, which can not only be used to solve the InSb infrared detector photosensitive surface The electrical crosstalk problem of expanding and multi-array detectors is also an excellent method for preparing planar devices.