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对Al掺杂的Zn O膜(AZO),一般是通过空心阴极气流溅射法,采用Zn-Al合金靶,将它沉积在玻璃上。溅射功率通常固定在1500 W,室温下,O2流量为38~50 sccm,可沉积出电阻率0.81×10-3~1.1×10-3Ω·cm的AZO膜,沉积速率几乎恒定在270~300 nm/min。此外,在200℃、O2流量为25~50 sccm下,也能得到5.2×10-4~6.4×10-4Ω·cm的低电阻率AZO膜,且能达到200~220 nm/min恒定沉积速率。两种膜在可见光范围内的透明度均在80%以上。
Al-doped ZnO films (AZO) are generally deposited on glass by a hollow cathode flow sputtering method using a Zn-Al alloy target. The sputtering power is usually fixed at 1500 W, and the O2 flow rate is 38-50 sccm at room temperature. The AZO film with a resistivity of 0.81 × 10-3 ~ 1.1 × 10-3Ω · cm can be deposited with the deposition rate being almost constant at 270-300 nm / min. In addition, a low resistivity AZO film of 5.2 × 10-4 ~ 6.4 × 10-4Ω · cm can be obtained at 200 ℃ with an O2 flow rate of 25-50 sccm, and a constant deposition rate of 200-220 nm / min can be achieved . The transparency of both films in the visible range is over 80%.