论文部分内容阅读
提出了一种基于硼酸溶液的GaAs/InP低温晶片键合技术,实现了GaAs/InP基材料间简单、无毒性的高质量、低温(290℃)晶片键合。GaAs/InP键合晶片解理截面的扫描电子显微镜(SEM)图显示,键合界面整齐,没有裂缝和气泡。通过键合过程,InP上的In0.53Ga0.47As/InP多量子阱结构转移到了GaAs基底上。X射线衍射及荧光谱显示,键合后的多量子阱晶体质量未变。二次离子质谱(SIMS)和Raman光谱图显示,GaAs/InP键合晶片的中间层厚度约为17 nm,界面处B元素有较高的浓度,键合晶片的中间层很薄,因此可以得到较好的电学、光学特性。
A low-temperature (290 ° C) wafer bonding process based on a low-temperature GaAs / InP wafer based on a boric acid solution was proposed to achieve a simple, non-toxic and high-quality GaAs / InP substrate. Scanning electron microscopy (SEM) images of cleaved sections of GaAs / InP bonded wafers show that the bonding interface is neat and free from cracks and bubbles. Through the bonding process, In0.53Ga0.47As / InP multiple quantum well structure on InP is transferred to the GaAs substrate. X-ray diffraction and fluorescence spectra showed that the mass of the bonded MQW crystal did not change. Secondary ion mass spectrometry (SIMS) and Raman spectroscopy showed that the thickness of the intermediate layer of the GaAs / InP bonded wafer was about 17 nm, the concentration of the element B at the interface was high, and the intermediate layer of the bonded wafer was thin so that Better electrical and optical properties.