The effect of buried misfit dislocation on the distribution of Ge self-assembled quantum dots (SAQDs) grown on a relaxed SiGe buffer layer was investigated. The
A new dimeric lanthanum(Ⅲ) complex [La2(phen)2(C7H3N2O6)6](phen=1,10-phenanthroline) was synthesized by the hydrothermal method and determined by single crysta