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本文报道了国产中规模体硅CMOS电路在~(60)Coγ射线和1.5MeV电子辐照下的总剂量效应的研究结果。试验表明,器件的软失效(参数退化达到某一损伤阈值)通常在400Gy(Si),而逻辑功能的失效则发生在1000Gy(Si)以后。同时,器件的软失效与辐照偏置条件没有明显的依赖关系,但软失效的参数却依赖于偏置条件及各厂家MOS工艺的差异。
This paper reports the results of the study on the total dose effect of domestic mid-size bulk CMOS circuits under ~ (60) Co γ-rays and 1.5 MeV electron irradiation. Experiments have shown that the soft failure of the device (parameter degradation reaches a certain damage threshold) is usually 400Gy (Si), while the failure of logic function occurs after 1000Gy (Si). At the same time, there is no obvious dependency between the soft failure of the device and the irradiation bias conditions, but the parameters of soft failure depend on the bias conditions and the differences of the MOS technology of each manufacturer.