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非制冷红外焦平面阵列的微桥结构在微加工工艺中,由于温度的剧烈变化,在薄膜中产生热应力而引起微桥的变形,将对器件产生不利影响。利用有限元分析方法,对微桥在热应力作用下产生的变形进行了分析,提出了两种控制热应变的途径:1)选择一种低热膨胀系数、低杨氏模量的电极材料;2)在电极材料的表面沉积一层SiNx薄膜。仿真结果表明,两种途径使微桥的最大形变值从1.4740μm分别减小到0.4799μm和0.0704μm,达到了减小热应变的目的。
Micro-bridge structure of uncooled infrared focal plane array In the micro-fabrication process, due to the drastic temperature changes, thermal stress in the film caused by the deformation of the micro-bridge will adversely affect the device. The finite element analysis method was used to analyze the deformation of micro-bridge under the thermal stress. Two ways of controlling thermal strain were proposed: 1) selecting a low thermal expansion coefficient and low Young’s modulus electrode material; 2 A layer of SiNx film is deposited on the surface of the electrode material. The simulation results show that the two approaches reduce the maximum deformation of micro-bridge from 1.4740μm to 0.4799μm and 0.0704μm, respectively, and achieve the purpose of reducing thermal strain.