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本文就掺杂多晶硅的氧化机理及影响其氧化速率的诸因素进行了分析。结果表明掺杂多晶硅的氧化速率受氧化温度、掺杂剂的分凝作用、掺杂的浓度等因素的影响。在低温(如800℃)下进行水汽氧化,就可以得到在要掺杂磷的多晶硅和轻掺杂的硅衬底之间具有约2000A的氧化层厚度差。 文中还对掺磷和掺硼多晶硅?电路的稳定性进行了比较,表明前者较为优越。并简要分析了掺硼硅?Ⅴ_r不稳定的原因。
In this paper, the oxidation mechanism of doped polysilicon and the factors that affect its oxidation rate were analyzed. The results show that the oxidation rate of doped polysilicon is affected by the oxidation temperature, the segregation of dopants, the concentration of doping and other factors. Oxidation of water vapor at a low temperature, such as 800 ° C, results in a difference in oxide layer thickness of about 2000 A between the phosphorus-doped polysilicon and the lightly doped silicon substrate. In this paper, we also compare the stability of phosphorus-doped and boron-doped polysilicon circuits, which shows that the former is superior. The reasons for the instability of Boron doped silicon Ⅴ Ⅴ were briefly analyzed.