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针对铯蒸气激光器对窄线宽与高稳定852nm半导体激光抽运源的要求,采用体布拉格(Bragg)光栅作为外腔输出镜,研究了体Bragg光栅衍射效率对外腔半导体激光器输出光谱特性的影响。研究结果表明,衍射效率为24%、32%与37%的体布拉格光栅均能够改善半导体激光器输出光谱特性;输出光束中心波长锁定在852nm附近、输出线宽约为0.26nm;外腔半导体激光器输出波长随抽运电流、温度的变化速率分别小于10.4pm/A、7.2pm/℃,优于自由运行半导体激光器;随着光栅衍射效率增加,全系统外腔效率从91%降低至86%。
In order to meet the requirement of narrow line width and high stable 852nm laser source, a Bragg grating was used as output mirror of external cavity. The effect of the Bragg grating diffraction efficiency on the output spectral characteristics of the external cavity semiconductor laser was studied. The results show that the Bragg grating with diffraction efficiency of 24%, 32% and 37% can both improve the output spectral characteristics of the semiconductor laser. The center wavelength of the output beam is locked at around 852 nm and the output linewidth is about 0.26 nm. The output of the external cavity semiconductor laser With the pumping current and wavelength, the rate of change of temperature is less than 10.4pm / A and 7.2pm / ℃ respectively, which is better than that of the free-running semiconductor laser. With the increase of grating diffraction efficiency, the efficiency of the whole system decreases from 91% to 86%.