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旁栅效应是制约GaAs集成电路性能和集成度的有害寄生效应。本文研究了MESFET电路的旁栅效应的光敏特性和迟滞现象 ,认为这两个现象可能与衬底深能级 (如EL2 )有密切的关系 ,通过减小衬底杂质补偿度有可能减轻旁栅效应影响。
The side-gate effect is a detrimental parasitic effect that limits the performance and integration of GaAs integrated circuits. In this paper, we study the photosensitivity and hysteresis of the MADFET circuit’s side-gate effect. It is concluded that these two phenomena may be closely related to the deep level of the substrate (such as EL2). By reducing the substrate impurity compensation, Effect effect.