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据报导,日本合成了超LSI用的高灵敏度,高分辨率正性丙烯系电子束抗蚀剂。 新研制的抗蚀剂和PMMA一样,用丙烯系正性型,在甲基丙烯酸的酯基部分,由3个以上碳原子的分岐状烷基叉连接环已基,提高对电子束的灵敏度,而且把电子束照射到的那部分键切断,这样做也容易。显影时溶解度一提高分辨率也提高了。总之,采用这种新方法制造的抗蚀剂,对微小的电子束也敏感,和没有电子束照射到的那部分溶解度相差很大,这是显影时能得到锐利图形的原因。
It is reported that Japan has synthesized ultra LSI with high sensitivity, high resolution positive acrylic electron beam resist. The newly developed resist, like PMMA, uses a propylene-based positive type in which a cyclohexenyl group is attached to a branched alkylidene group of three or more carbon atoms in the ester group of methacrylic acid to improve the sensitivity to electron beams, And it is also easy to cut that part of the key to which the electron beam is irradiated. As the resolution increases as the resolution increases as the developer develops. In summary, the resist produced by this new method is also sensitive to minute electron beams and has a very different degree of solubility from the portion to which no electron beam is irradiated, which is why sharp patterns can be obtained during development.