论文部分内容阅读
本文介绍了一台低能全元素离子注入机。它的能量范围为5～60keV;离子品种是从~1H到~(209)Bi;最低能量5keV的As~+、Se~+等重离子的靶流为2～5μA;注入靶片φ50;注入均匀度σ<3％;注入温度:室温～400℃可调。已制备出0.1μm以下的GaAs超薄有源层和硅超浅结。
This article describes a low-energy full-element ion implanter. Its energy range is 5 ~ 60keV; the ion species is from ~ 1H to ~ (209) Bi; the target flow of As ~ +, Se ~ + and other heavy ions with the lowest energy 5keV is 2-5μA; Uniformity σ <3%; Injection temperature: room temperature ~ 400 ℃ adjustable. Ultra-thin GaAs active layers and ultra-shallow silicon junctions below 0.1μm have been fabricated.