【摘 要】
：
In this work,(-2 0 1) β-Ga2O3 films are grown on GaN substrate by metal organic chemical vapor deposition (MOCVD).It is revealed that the β-Ga2O3 film grown o
【机 构】
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State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronic
【出 处】
：
中国科学:物理学 力学 天文学（英文版）
论文部分内容阅读
In this work,(-2 0 1) β-Ga2O3 films are grown on GaN substrate by metal organic chemical vapor deposition (MOCVD).It is revealed that the β-Ga2O3 film grown on GaN possesses superior crystal quality,material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga2O3 film based on sapphire substrate.Further,the relevance between the crystal quality of epitaxial β-Ga2O3 film and the β-Ga2O3/GaN interface behavior is investigated.Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga2O3 film.Moreover,the energy band structure of β-Ga2O3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained.The results in this work not only convincingly demonstrate the advantages of β-Ga2O3 films grown on GaN substrate,but also show the great application potential of MOCVD β-Ga2O3/GaN heterostructures in microelectronic applications.
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