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在原磁控溅射三靶镀膜机上安装了UPS03反应溅射闭环控制单元,替代原有的级差法控制流量计改变反应气体流量的方法,实现反应溅射AlN反馈控制。该控制单元由UPC03型控制器和PCV03型压电陶瓷阀组成。控制器实时采集直流电源的Al靶电压信号,与设定电压进行比较计算处理,输出电压控制信号至压电陶瓷阀,调节输出N2流量,实现Al靶电压稳定控制。在靶表面处于过渡态下,成功制备了吸收几乎为零的AlN薄膜。溅射功率14kW,反应溅射沉积AlN的靶电压波动可长时间稳定控制在±2V范围内,沉积速率高达4.5nm/(min·kW),约为Al靶在无反应气体溅射下沉积Al薄膜速率的80%。溅射沉积的AlN薄膜作为减反射层应用到SS-AlN太阳选择性吸收涂层中,使得太阳吸收比高达0.956。
In the original magnetron sputtering three target coating machine installed UPS03 reactive sputtering closed-loop control unit, instead of the original step control flowmeter to change the flow of reactive gas method to achieve reactive sputtering AlN feedback control. The control unit consists of UPC03 controller and PCV03 piezoelectric ceramic valve. The controller real-time collects the Al target voltage signal of the DC power supply, compares and calculates with the set voltage, outputs the voltage control signal to the piezoceramic valve, regulates the output N2 flow rate, and realizes the stability control of the Al target voltage. In the transitional state of the target surface, the AlN thin film with almost zero absorption was successfully prepared. Sputtering power of 14kW, target sputter deposition of AlN target voltage fluctuations can be long-term stable control in the ± 2V range, the deposition rate of up to 4.5nm / (min · kW), about Al target deposition of Al 80% of film rate. Sputtered AlN films were applied as antireflective coatings to the SS-AlN solar selective absorption coating, resulting in a solar absorption ratio of up to 0.956.