以SiH_4和O_2作为反应气体,利用电感耦合等离子体增强型化学气相淀积(ICPECVD)技术在100~200℃内制备了氧化硅薄膜,采用HF酸腐蚀速率法来表征其致密性,并通过正交试验设计的方法研究了射频功率、反应室压强和衬底温度三个关键工艺参数对氧化硅薄膜致密性的影响,并对结果进行了优化。实验数据的方差分析结果表明,影响氧化硅致密性的工艺参数主次顺序为衬底温度、射频功率和反应室压强,并得到了各因素对氧化硅致密性的影响趋势,同时讨论了其影响机理。最后得出了制备氧化硅薄膜的最优化工艺参数组合。 SiH 4 and O 2 were used as reaction gases, and the silicon oxide films were prepared by inductively coupled plasma-enhanced chemical vapor deposition (ICPECVD) at 100 ~ 200 ℃. The HF acid corrosion rate was used to characterize the densification of the films. The experimental design of the method to study the RF power, the reaction chamber pressure and the substrate temperature of three key process parameters on the silica film compactness, and the results were optimized. The results of variance analysis of the experimental data show that the primary and secondary order of the process parameters affecting the compactness of silicon oxide are the substrate temperature, RF power and pressure of the reaction chamber. The influence of each factor on the compactness of silica is also discussed. mechanism. Finally, the optimal process parameters for the preparation of silicon oxide films were obtained.