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考察了在600℃以下通过反应AlCl3+NH3→AlN+3HCl制备AlN纳米锥的规律,结果表明在500℃时仍可获得AlN纳米锥,当温度为480℃时则无氮化物生成。场发射测试显示在500~600℃温区内制得的AlN纳米锥的开启电场处于14.2~20 V·μm-1范围,且随制备温度升高而减小。结果表明AlN纳米锥可在低温条件下获得,且具有较好的场发射性能。
AlN nanocones prepared by reaction of AlCl3 + NH3 → AlN + 3HCl at 600 ℃ were investigated. The results show that AlN nanocones can still be obtained at 500 ℃ and no nitrides at 480 ℃. The field emission test showed that the turn-on electric field of AlN nanocones fabricated in the temperature range of 500-600 ℃ was in the range of 14.2-20 V · μm-1, and decreased with the increase of the preparation temperature. The results show that AlN nanocones can be obtained at low temperature and have good field emission properties.