研究 Ga As基 Inx Ga1 -x As/ Ga As量子点 (QD)的 MBE生长条件 ,发现在一定的 / 比下 ,衬底温度和生长速率是影响 Inx Ga1 -x As/ Ga As QD形成及形状的一对重要因素 ,其中衬底温度直接影响着 In的偏析程度 ,决定了 Inx Ga1 -x As/ Ga As的生长模式 ;生长速率影响着Inx Ga1 -x As外延层的质量 ,决定了 Inx Ga1 -x As/ Ga As QD的形状及尺寸 .通过调节衬底温度和生长速率生长出了形状规则、尺寸较均匀的 Inx Ga1 -x As/ Ga As QD(x=0 .3) The MBE growth conditions of Ga As-based InxGa1-xAs / GaAs QDs were investigated and it was found that the substrate temperature and growth rate are responsible for the formation and shape of InxGa1-xAs / GaAs QDs at a certain ratio , Of which the substrate temperature directly affects the segregation degree of In, which determines the growth mode of InxGa1-xAs / GaAs; the growth rate affects the quality of the InxGa1-xAs epitaxial layer and determines the InxGa1 -x As / Ga As QD shape and size. By changing the substrate temperature and growth rate, a regular, uniform-sized Inx Ga1-x As / Ga As QD (x = 0.3)