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多沟道面结型-栅极场效应晶体管及其优点,在1964年以隐栅场效应晶体管这个题目已被介绍过了。它包括垂直的和水平的沟道结构。它的发展为的是将场效应晶体管和双极晶体管的优点合并到同一器件中。水平沟道结构所具有的特性在功率管甚高频波段中是十分有用的;但对更高频率和更大功率领域,垂直沟道结构基本上则更为适合。然而,为了发展微波功率领域的这种结构,必须对其作一透彻的了解,以克服其缺点(即较高的栅电阻和微分漏电导等)。第一个问题的解决是将栅的几何形状加以修正,并且增加栅极的体内杂质浓度。第二个问题的解决是将源和漏的薄层电阻给以适当的梯度。于是,使用通常的工艺和普通的栅极精密度(但是要适当的栅极图形)已经得到1千兆赫以上的工作频率、f_(max)约为5千兆赫、频率-功率乘积约为5千兆赫·瓦的单片隐栅场效应晶体管。本文讨论这种器件的特点,并给出全套的实验结果。最后,对不久的将来可望实现,现在已经开始着手进行的功率范围1～2瓦、工作频率8千兆赫的器件作了概述。本文也讨论了接近隐栅场效应晶体管极限的预计结构。本文仅涉及隐栅场效应晶体管的实验部分。
Multi-channel junction-gate field-effect transistors and their advantages, introduced in 1964 with the object of a buried gate field effect transistor. It includes vertical and horizontal channel structures. It has evolved to incorporate the advantages of field-effect transistors and bipolar transistors into the same device. The characteristics of a horizontal channel structure are very useful in the VHF band of the power tube; however, the vertical channel structure is generally more suitable for higher frequencies and more power. However, in order to develop such a structure in the field of microwave power, a thorough understanding must be given to overcome its disadvantages (that is, higher gate resistance and differential leakage conductance, etc.). The first solution to this problem is to correct the geometry of the gate and increase the impurity concentration in the gate. The second problem to be solved is to give the appropriate resistance to the sheet resistance of the source and drain. As a result, operating frequencies above 1 gigahertz, fmax (max) of about 5 gigahertz, and frequency-power products of about 5 thousand have been achieved using typical processes and normal gate precision (but with proper gate patterns) Megahertz Watt Monolithic Implicit Field Effect Transistor. This article discusses the characteristics of this device, and gives a full set of experimental results. Finally, a summary of the devices that are expected to be implemented in the very near future, with a power range of 1-2 watts and an operating frequency of 8 gigahertz, is now under way. This article also discusses the expected structure near the threshold of a buried gate field effect transistor. This article only covers the experimental part of the buried gate field effect transistor.