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SiC films on Si substrates were deposited by RF co-sputtering of the Si and C compound target and implanted by 120 keV N ions with MEVVA ion current. The structure, optical property were studied by Fourier transform infrared spectrum (FTIR) and photoluminescence (PL) spectroscopy. The studied results indicated that carbon nitride single bond, double bond and triangle bond (Fig.1) are produced in the SiC film implanted. Its luminescence intensity depends strongly on the quantity of N ions. From the Fig.2 we can clearly observed
SiC films on Si were deposited by RF co-sputtering of the Si and C compound target and implanted by 120 keV N ions with MEVVA ion current. The structure, optical properties were studied by Fourier transform infrared spectrum (FTIR) and photoluminescence (PL ) The studied results indicated that carbon nitride single bond, double bond and triangle bond (Fig.1) are produced in the SiC film implanted. Its luminescence intensity strongly strongly on the quantity of N ions. clearly observed