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采用室温恒电流电化学技术直接在金属钨片上制备了1~155 min不同时间的CaWO_4晶态薄膜样品,并对这些样品进行SEM和XRD测试,研究表明:电化学技术制备CaWO_4薄膜时,开始成核时间较晚,晶核和晶粒最先在基底的缺陷处形成,晶核的形成和晶粒的长大同时进行,由W-O_4负离子配位多面体的沉积和Ca~(2+)的填充来完成;晶粒长大后的形貌呈表面光滑的团簇状;晶粒数量和粒度的增加完成薄膜的生长并成为具有四方相结构的单相晶态薄膜。
The samples of CaWO 4 crystalline thin films with different time from 1 min to 155 min were prepared by galvanostatic galvanostatic technique at room temperature and the SEM and XRD measurements of these samples were carried out. The results show that when the electrochemical method is used to prepare CaWO 4 thin films, The nucleus time is later, the nuclei and the crystal grains are firstly formed at the substrate defects, and the formation of the nuclei and the growth of the crystal grains proceed simultaneously. The deposition of the coordination polyhedron of W-O 4 and Ca 2+ Filled to complete; the morphology of the grains grew smooth surface clusters; the increase of the number of grains and grain size to complete the film growth and become a tetragonal phase structure of the single-phase crystalline film.