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用等离子体增强化学汽相沉积法(PECVD)在玻璃和单晶硅(c-Si)衬底上分别制备了氢化纳米硅(nc-Si:H)和非晶硅(a-Si:H)薄膜,用紫外、可见和近红外3种不同波长的激光线对不同形态的Si薄膜进行拉曼散射实验研究。研究发现,这些Si薄膜在不同的单光子能量的激光线激发下的拉曼谱线形也不同。进而通过对Si薄膜材料中光吸收系数、折射率、消光系数和穿透深度等的理论分析以及薄膜内部原子数密度及键能密度的计算,对实验结果进行了详细的解释。研究表明,在对Si薄膜微观特性的拉曼光谱研究中,应根据薄膜的具体厚度选择最合适的激发波长,才能对精细微结构获得更为深层次的认识。
Hydrogenated nano-silicon (nc-Si: H) and amorphous silicon (a-Si: H) were prepared on glass and single crystal silicon (c-Si) substrates by plasma enhanced chemical vapor deposition (PECVD) The Raman scattering of Si films with different morphologies was studied by using three different wavelengths of laser light (UV, visible and near infrared). It is found that the Raman spectra of these Si thin films are different under the different single-photon energy laser line excitation. Furthermore, the theoretical analysis of the optical absorption coefficient, refractive index, extinction coefficient and penetration depth in Si thin film material and the calculation of atomic number density and bond energy density in the thin film material are explained in detail. The experimental results are explained in detail. The research shows that in the Raman spectroscopy study on the microscopic characteristics of Si thin films, the most suitable excitation wavelength should be selected according to the specific thickness of the thin film, so as to obtain a deeper understanding of the fine microstructures.