计算了ＺｎＳ中电子谷间散射的速率．利用蒙特卡罗方法，研究了ＺｎＳ型薄膜电致发光器件中电子的能谷转移过程．得出了能谷转移的瞬态过程，电场对谷间分布的影响以及不同能谷中电子动能分布的特点．提出了高能谷的能量存储效应．这些结果可作为研究电致发光过程的基本数据． The rate of scattering between electron troughs in ZnS was calculated. The energy transfer of electrons in ZnS thin film electroluminescent device was studied by Monte Carlo method. The transient process of valley transfer, the influence of electric field on valley distribution and the distribution of electron kinetic energy in different valley are obtained. Proposed energy storage effect of high energy valley. These results serve as basic data for the study of the electroluminescence process.