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在室温条件下 ,研究了辐照偏置、总剂量和剂量率对 PMOS剂量计辐照剂量记录 -阈电压的稳定性影响 ,观察了辐照后阈电压在不同栅偏条件下的变化趋势和幅度。分析认为慢界面陷阱中电荷的“充放电”是造成不稳定的首要原因。结果表明 ,该种由慢界面态造成的阈电压变化在每次开机测量下具有重复性。讨论了在 PMOS剂量计中提高稳定性的办法。
At room temperature, the effects of irradiation bias, total dose and dose rate on the stability of the dose-recording-threshold voltage of the PMOS dosimeter were studied. The trend of the threshold voltage under different gate bias conditions after irradiation was observed and Magnitude. It is considered that the charge-discharge of the slow interface trap is the primary cause of instability. The results show that this kind of threshold voltage variation caused by slow interface states is reproducible at every turn-on measurement. Discuss ways to improve stability in PMOS dosimeters.