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Optical gain characteristics of Ge_(1_x)Snμx are simulated systematically.With an injection carrier concentration of 5×10~(18)/cm~3 at room temperature,the maximal optical gain of Ge_(0.922)Sn_(0.078) alloy(with n-type doping concentration being 5×10~(18)/cm~3) reaches 500 cm~(-1).Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge_(0.554)Si_(0.289)Sn_(0.157)/Ge_(0.922)Sn_(0.078)/Ge_(0.554)Si_(0.289)Sn_(0.157) short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density J_(th)are 6.47 kA/cm~2(temperature:200 K,and λ=2050 nm),10.75 kA/cm~2(temperature:200 K,and λ=2000 nm),and23.12 kA/cm~2(temperature:300 K,and λ=2100 nm),respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge_(1-x)Sn_x laser.
The optical gain characteristics of Ge_ (1_x) Snμx are simulated systematically. With an injection carrier concentration of 5 × 10 ~ (18) / cm ~ 3 at room temperature, the maximal optical gain of Ge_ (0.922) Sn_ (0.078) n-type doping concentration being 5 × 10 ~ (18) / cm ~ 3) reaches 500 cm ~ (-1) .Moreover, considering the free-carrier absorption effect, we find that there is an optimal injection carrier density to achieve a (0.554) Si 0.289 Sn 0.1577 / Ge 0.922 Sn 0.078 / Ge 0.554 Si 0.289 Sn 0.157 Short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density. The simulation values of the device threshold current density J_ (th) are 6.47 kA / cm ~ 2 at temperature: 200 K and λ = 2050 nm, Respectively. The results indicate that the probability to obtain a Si-based short- wave infrared Ge_ (1-x) Sn_x laser.